document number: 88503 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-feb-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 general purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features ? low forward voltage drop ? low leakage current ? high forward surge capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in general purpose rect ification of power supplies, inverters, converters and freewheeling diodes application. note ? these devices are no t aec-q101 qualified. mechanical data case: do-204al, molded epoxy body molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end note (1) for device using on bridge rectifier appliaction primary characteristics i f(av) 1.0 a v rrm 50 v to 1000 v i fsm (8.3 ms sine-wave) 30 a i fsm (square wave t p = 1 ms) 45 a v f 1.1 v i r 5.0 a t j max. 150 c do-204al (do-41) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit maximum repetitive pe ak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t a = 75 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a non-repetitive peak forward surge current square waveform t a = 25 c (fig. 3) t p = 1 ms i fsm 45 a t p = 2 ms 35 t p = 5 ms 30 maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length t l = 75 c i r(av) 30 a rating for fusing (t < 8.3 ms) i 2 t (1) 3.7 a 2 s operating junction and storage temperature range t j , t stg - 50 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88503 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-feb-11 1n4001 thru 1n4007 vishay general semiconductor note (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, pcb mounted ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive pe ak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol 1n 4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit maximum instantaneous forward voltage 1.0 a v f 1.1 v maximum dc reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a t a = 125 c 50 typical junction capacitance 4.0 v, 1 mhz c j 15 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit typical thermal resistance r ? ja (1) 50 c/w r ? jl (1) 25 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode 1n4004-e3/54 0.33 54 5500 13" diameter paper tape and reel 1n4004-e3/73 0.33 73 3000 ammo pack packaging 0 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 junction temperature (c) average forward rectified current (a) 0.375 " (9.5 mm) lead length 0.2 " x 0.2 " (5.0 mm x 5.0 mm) copper pad s 60 hz re s i s tive or inductive load 5 10 15 20 25 30 number of cycle s at 60 hz 1 10 100 t a = 55 c 8.3 m s s ingle half s ine-wave peak forward s urge current (a)
document number: 88503 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-feb-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 1n4001 thru 1n4007 vishay general semiconductor fig. 3 - non-repetitive peak forward surge current fig. 4 - typical instantaneous forward characteristics fig. 5 - typical reverse characteristics fig. 6 - typical j unction capacitance fig. 7 - typical transient thermal impedance 50 75 100 50 25 125 30 25 20 15 45 40 35 10 ambient temperature (c) sq uare waveform t p t p = 1 m s t p = 5 m s t p = 2 m s peak forward s urge current (a) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 1 10 100 in s tantaneou s forward voltage (v) in s tantan eou s forwar d current (a) t j = 25 c pul s e width = 300 s 1 % duty cycle 0 0.01 0.1 1 10 100 60 80 100 20 40 1000 percentage of peak rever s e voltage (%) in s tantaneou s rever s e current (a) t j = 150 c t j = 25 c t j = 100 c 1 10 100 rever s e voltage (v) 0.1 1 10 100 junction capacitance (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.1 10 100 1 0.01 0.1 1 10 100 t - pul s e duration ( s ) tran s ient thermal impedance (c/w)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88503 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-feb-11 1n4001 thru 1n4007 vishay general semiconductor package outline dimensions in inches (millimeters) do-204al (do-41) 1.0 (25.4) min. 1.0 (25.4) min. 0.205 (5.2) 0.160 (4.1) 0.107 (2.7) 0.080 (2.0) dia. 0.034 (0.86) 0.028 (0.71) dia. ? lead diameter i s for s uffix e part number s 0.026 (0.66) 0.023 (0.58) note
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